SEMICONDUCTOR MEMORY

SEMICONDUCTOR MEMORY

PROBLEM TO BE SOLVED: To provide a technology for improving accuracy of timing of a data strobe signal by considering load information of the outside after mounting a board. SOLUTION: By comparing phases of an output signal from dummy delay means 41-54 with a phase of a signal having load informatio...

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Hauptverfasser: CHIGASAKI HIDEO, AOYAMA SATOSHI, SAIKI YOZO
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator CHIGASAKI HIDEO
AOYAMA SATOSHI
SAIKI YOZO
description PROBLEM TO BE SOLVED: To provide a technology for improving accuracy of timing of a data strobe signal by considering load information of the outside after mounting a board. SOLUTION: By comparing phases of an output signal from dummy delay means 41-54 with a phase of a signal having load information outside a chip viewed from an output terminal of a data strobe signal generating means 213 and adjusting delay quantity in a second variable delay means 46 based on this phase comparison result, load information outside a chip viewed from the output terminal of the data strobe signal generating means is reflected on the circuit. Thereby, accuracy of timing of the data strobe signal is improved.
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SOLUTION: By comparing phases of an output signal from dummy delay means 41-54 with a phase of a signal having load information outside a chip viewed from an output terminal of a data strobe signal generating means 213 and adjusting delay quantity in a second variable delay means 46 based on this phase comparison result, load information outside a chip viewed from the output terminal of the data strobe signal generating means is reflected on the circuit. 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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title SEMICONDUCTOR MEMORY
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