SEMICONDUCTOR DEVICE COMPRISING HIGH-DIELECTRIC CAPACITOR DIELECTRIC AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a semiconductor memory device, having a capacitor dielectric film which has having a high dielectric constant (K). SOLUTION: The semiconductor device used in memory cells comprises a semiconductor substrate, an active matrix comprising many transistors formed on the...
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| creator | YASU HEIKEN BOKU KIZEN |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor memory device, having a capacitor dielectric film which has having a high dielectric constant (K). SOLUTION: The semiconductor device used in memory cells comprises a semiconductor substrate, an active matrix comprising many transistors formed on the semiconductor substrate and conductive plugs, connected electrically to the transistors, many lower electrodes formed on the conductive plugs, a synthetic film formed on the lower electrodes, and an aluminum oxide (Al2O3) film formed on the synthetic film. |
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SOLUTION: The semiconductor device used in memory cells comprises a semiconductor substrate, an active matrix comprising many transistors formed on the semiconductor substrate and conductive plugs, connected electrically to the transistors, many lower electrodes formed on the conductive plugs, a synthetic film formed on the lower electrodes, and an aluminum oxide (Al2O3) film formed on the synthetic film.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010831&DB=EPODOC&CC=JP&NR=2001237401A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010831&DB=EPODOC&CC=JP&NR=2001237401A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YASU HEIKEN</creatorcontrib><creatorcontrib>BOKU KIZEN</creatorcontrib><title>SEMICONDUCTOR DEVICE COMPRISING HIGH-DIELECTRIC CAPACITOR DIELECTRIC AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor memory device, having a capacitor dielectric film which has having a high dielectric constant (K). SOLUTION: The semiconductor device used in memory cells comprises a semiconductor substrate, an active matrix comprising many transistors formed on the semiconductor substrate and conductive plugs, connected electrically to the transistors, many lower electrodes formed on the conductive plugs, a synthetic film formed on the lower electrodes, and an aluminum oxide (Al2O3) film formed on the synthetic film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNiz0LwjAUALM4iPofgnshbQXn8PLaPDEfpEnXEiROooX6_xFFcHU6OO7WLA9oCJxVCaILXOFIgByc8YEGsj3X1OtKEZ4RYiDgIL0E-rQ_Ka3iFAdupE2dhJjCezUYtVNbtrrm21J2X27YvsMIuirzYyrLnC_lXp7TyTdC1E17PIhatn9FLzWKNDk</recordid><startdate>20010831</startdate><enddate>20010831</enddate><creator>YASU HEIKEN</creator><creator>BOKU KIZEN</creator><scope>EVB</scope></search><sort><creationdate>20010831</creationdate><title>SEMICONDUCTOR DEVICE COMPRISING HIGH-DIELECTRIC CAPACITOR DIELECTRIC AND ITS MANUFACTURING METHOD</title><author>YASU HEIKEN ; BOKU KIZEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2001237401A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YASU HEIKEN</creatorcontrib><creatorcontrib>BOKU KIZEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YASU HEIKEN</au><au>BOKU KIZEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE COMPRISING HIGH-DIELECTRIC CAPACITOR DIELECTRIC AND ITS MANUFACTURING METHOD</title><date>2001-08-31</date><risdate>2001</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor memory device, having a capacitor dielectric film which has having a high dielectric constant (K). SOLUTION: The semiconductor device used in memory cells comprises a semiconductor substrate, an active matrix comprising many transistors formed on the semiconductor substrate and conductive plugs, connected electrically to the transistors, many lower electrodes formed on the conductive plugs, a synthetic film formed on the lower electrodes, and an aluminum oxide (Al2O3) film formed on the synthetic film.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SEMICONDUCTOR DEVICE COMPRISING HIGH-DIELECTRIC CAPACITOR DIELECTRIC AND ITS MANUFACTURING METHOD |
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