THIN-FILM FORMING APPARATUS

PROBLEM TO BE SOLVED: To prevent particles formed by the separation of a thin film, deposited on a substrate holder from adhering to a substrate. SOLUTION: A film-removing chamber 70 is connected airtightly to an unload lock chamber 2, in which the substrates 9 on which films have been formed are un...

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Bibliographische Detailangaben
Hauptverfasser:	MAEDA KOJI, ARIGA YOSHIKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent particles formed by the separation of a thin film, deposited on a substrate holder from adhering to a substrate. SOLUTION: A film-removing chamber 70 is connected airtightly to an unload lock chamber 2, in which the substrates 9 on which films have been formed are unloaded from the substrate holder 90 and a load lock chamber 1, in which the substrates 9 on which films have not been formed are loaded on the substrate holder 90 in a return transfer route between the unload lock chamber 2 and the load lock chamber 1. A film-removing mechanism, which removes the thin film deposited on the substrate holder 90 by sputtering etching using ion impact is provided in the film-removing chamber 70.