SPLIT-GATE TYPE MEMORY CELL

PROBLEM TO BE SOLVED: To obtain a split-gate type memory cell having superior erasure characteristics. SOLUTION: This split-gate type memory cell 1 comprises a source region 2, drain region 3, channel region 4, floating gate electrode 5, and control gate electrode 6. The floating gate electrode 5 co...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SHUDO SHOJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!