MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device, where a P+GaAs layer can be exposed surely. SOLUTION: In the manufacturing method of a semiconductor device, which includes a GaAs layer and an InGaP layer formed on the GaAs layer, a first process 1 where the InGaP la...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	NIWA SHIGEKI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!