SEMICONDUCTOR MODULE AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To realize a semiconductor module by chip-on-chip mounting of high accuracy and reliability at a low cost using solder bumps by a method wherein a mask is provided between the solder bumps so as to prevent a solder bridge from being formed, and the shape of the mask is devised....

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1. Verfasser: TAKASE YOSHIHISA
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description PROBLEM TO BE SOLVED: To realize a semiconductor module by chip-on-chip mounting of high accuracy and reliability at a low cost using solder bumps by a method wherein a mask is provided between the solder bumps so as to prevent a solder bridge from being formed, and the shape of the mask is devised. SOLUTION: A first and a second protective film, 5 and 5, are formed so as to partially cover the first to third electrode, 2 to 4, of first semiconductor elements 6 and 7. The first to third electrode, 2 to 4, are metallized by electroless plating. A mask for providing an opening which is high so as not to make the solder of a solder bump 15 protrude and makes the first electrode 2 exposed is formed on the first protective film 5, and an opening is provided. The opening is filled up with cream solder 14, and solder bumps 15 are formed by heating. A second protective film 5 is formed so as to partially cover the second and third electrode, 3 and 4, and to make the tip of a plating bump 9 protrude. The first and second electrode, 2 and 3, are made to confront each other, and the first and second semiconductor element, 6 and 7, are formed in one piece by heating.
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SOLUTION: A first and a second protective film, 5 and 5, are formed so as to partially cover the first to third electrode, 2 to 4, of first semiconductor elements 6 and 7. The first to third electrode, 2 to 4, are metallized by electroless plating. A mask for providing an opening which is high so as not to make the solder of a solder bump 15 protrude and makes the first electrode 2 exposed is formed on the first protective film 5, and an opening is provided. The opening is filled up with cream solder 14, and solder bumps 15 are formed by heating. A second protective film 5 is formed so as to partially cover the second and third electrode, 3 and 4, and to make the tip of a plating bump 9 protrude. 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SOLUTION: A first and a second protective film, 5 and 5, are formed so as to partially cover the first to third electrode, 2 to 4, of first semiconductor elements 6 and 7. The first to third electrode, 2 to 4, are metallized by electroless plating. A mask for providing an opening which is high so as not to make the solder of a solder bump 15 protrude and makes the first electrode 2 exposed is formed on the first protective film 5, and an opening is provided. The opening is filled up with cream solder 14, and solder bumps 15 are formed by heating. A second protective film 5 is formed so as to partially cover the second and third electrode, 3 and 4, and to make the tip of a plating bump 9 protrude. 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SOLUTION: A first and a second protective film, 5 and 5, are formed so as to partially cover the first to third electrode, 2 to 4, of first semiconductor elements 6 and 7. The first to third electrode, 2 to 4, are metallized by electroless plating. A mask for providing an opening which is high so as not to make the solder of a solder bump 15 protrude and makes the first electrode 2 exposed is formed on the first protective film 5, and an opening is provided. The opening is filled up with cream solder 14, and solder bumps 15 are formed by heating. A second protective film 5 is formed so as to partially cover the second and third electrode, 3 and 4, and to make the tip of a plating bump 9 protrude. The first and second electrode, 2 and 3, are made to confront each other, and the first and second semiconductor element, 6 and 7, are formed in one piece by heating.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR MODULE AND ITS MANUFACTURE
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