ANISOTROPIC NITRIDE ETCHING HAVING HIGH SENSITIVITY WITH RESPECT TO OXIDE AND PHOTORESIST LAYER

PROBLEM TO BE SOLVED: To pattern a silicon nitride layer so that it has a high aspect ratio by etching an exposed part of the silicon nitride layer with a high density plasma generated by exciting an etchant gas which includes a polymerizing agent, a source of hydrogen, an oxidant, and a noble gas d...

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Bibliographische Detailangaben

Hauptverfasser:	WILLIAM C WILEY, HUSSEIN I HANAPHY, WOLDEMAR W KOKON, BURNS STUART M, RICHARD WISE, DAINE C BOYD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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