PRODUCTION OF SILICON SUBSTRATE FOR SOLAR BATTERY

PROBLEM TO BE SOLVED: To provide a method for producing a silicon substrate for a solar battery of high quality, high cell efficiency and a low cost by efficiently removing impurities contained in the metallic silicon starting raw material to the desired concentration level. SOLUTION: The high quali...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TOKUNAGA KATSUSHI, HIRASAWA TERUHIKO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TOKUNAGA KATSUSHI
HIRASAWA TERUHIKO
description PROBLEM TO BE SOLVED: To provide a method for producing a silicon substrate for a solar battery of high quality, high cell efficiency and a low cost by efficiently removing impurities contained in the metallic silicon starting raw material to the desired concentration level. SOLUTION: The high quality silicon substrate for a solar battery is obtained by melting high purity metallic silicon by an electron beam in vacuum in order to vaporize and remove volatile impurities such as P, Al, Ca or the like, then cutting and removing the condensed part of the heavy metal impurities such as Fe, Ti or the like in a purification process in a solidified phase, further crushing and washing the obtained ingot to obtain a coarsely purified raw material, subsequently plasma-melting the coarsely purified raw material under an oxidizing atmosphere to vaporize and remove non-volatile impurities such as B, C or the like as the oxides, furthermore cutting and removing the condensed part of heavy metal impurities such as Fe, Ti or the like in the solid phase finish purification process and finally slicing the purified ingot.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2000327488A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2000327488A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2000327488A3</originalsourceid><addsrcrecordid>eNrjZDAMCPJ3CXUO8fT3U_B3Uwj29PF0BjKDQ52CQ4IcQ1wV3PyDFIL9fRyDFJwcQ0JcgyJ5GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgYGBsZG5iYWFozFRigC6oyc9</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRODUCTION OF SILICON SUBSTRATE FOR SOLAR BATTERY</title><source>esp@cenet</source><creator>TOKUNAGA KATSUSHI ; HIRASAWA TERUHIKO</creator><creatorcontrib>TOKUNAGA KATSUSHI ; HIRASAWA TERUHIKO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for producing a silicon substrate for a solar battery of high quality, high cell efficiency and a low cost by efficiently removing impurities contained in the metallic silicon starting raw material to the desired concentration level. SOLUTION: The high quality silicon substrate for a solar battery is obtained by melting high purity metallic silicon by an electron beam in vacuum in order to vaporize and remove volatile impurities such as P, Al, Ca or the like, then cutting and removing the condensed part of the heavy metal impurities such as Fe, Ti or the like in a purification process in a solidified phase, further crushing and washing the obtained ingot to obtain a coarsely purified raw material, subsequently plasma-melting the coarsely purified raw material under an oxidizing atmosphere to vaporize and remove non-volatile impurities such as B, C or the like as the oxides, furthermore cutting and removing the condensed part of heavy metal impurities such as Fe, Ti or the like in the solid phase finish purification process and finally slicing the purified ingot.</description><edition>7</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20001128&amp;DB=EPODOC&amp;CC=JP&amp;NR=2000327488A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20001128&amp;DB=EPODOC&amp;CC=JP&amp;NR=2000327488A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOKUNAGA KATSUSHI</creatorcontrib><creatorcontrib>HIRASAWA TERUHIKO</creatorcontrib><title>PRODUCTION OF SILICON SUBSTRATE FOR SOLAR BATTERY</title><description>PROBLEM TO BE SOLVED: To provide a method for producing a silicon substrate for a solar battery of high quality, high cell efficiency and a low cost by efficiently removing impurities contained in the metallic silicon starting raw material to the desired concentration level. SOLUTION: The high quality silicon substrate for a solar battery is obtained by melting high purity metallic silicon by an electron beam in vacuum in order to vaporize and remove volatile impurities such as P, Al, Ca or the like, then cutting and removing the condensed part of the heavy metal impurities such as Fe, Ti or the like in a purification process in a solidified phase, further crushing and washing the obtained ingot to obtain a coarsely purified raw material, subsequently plasma-melting the coarsely purified raw material under an oxidizing atmosphere to vaporize and remove non-volatile impurities such as B, C or the like as the oxides, furthermore cutting and removing the condensed part of heavy metal impurities such as Fe, Ti or the like in the solid phase finish purification process and finally slicing the purified ingot.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMCPJ3CXUO8fT3U_B3Uwj29PF0BjKDQ52CQ4IcQ1wV3PyDFIL9fRyDFJwcQ0JcgyJ5GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgYGBsZG5iYWFozFRigC6oyc9</recordid><startdate>20001128</startdate><enddate>20001128</enddate><creator>TOKUNAGA KATSUSHI</creator><creator>HIRASAWA TERUHIKO</creator><scope>EVB</scope></search><sort><creationdate>20001128</creationdate><title>PRODUCTION OF SILICON SUBSTRATE FOR SOLAR BATTERY</title><author>TOKUNAGA KATSUSHI ; HIRASAWA TERUHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000327488A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TOKUNAGA KATSUSHI</creatorcontrib><creatorcontrib>HIRASAWA TERUHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOKUNAGA KATSUSHI</au><au>HIRASAWA TERUHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF SILICON SUBSTRATE FOR SOLAR BATTERY</title><date>2000-11-28</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for producing a silicon substrate for a solar battery of high quality, high cell efficiency and a low cost by efficiently removing impurities contained in the metallic silicon starting raw material to the desired concentration level. SOLUTION: The high quality silicon substrate for a solar battery is obtained by melting high purity metallic silicon by an electron beam in vacuum in order to vaporize and remove volatile impurities such as P, Al, Ca or the like, then cutting and removing the condensed part of the heavy metal impurities such as Fe, Ti or the like in a purification process in a solidified phase, further crushing and washing the obtained ingot to obtain a coarsely purified raw material, subsequently plasma-melting the coarsely purified raw material under an oxidizing atmosphere to vaporize and remove non-volatile impurities such as B, C or the like as the oxides, furthermore cutting and removing the condensed part of heavy metal impurities such as Fe, Ti or the like in the solid phase finish purification process and finally slicing the purified ingot.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2000327488A
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title PRODUCTION OF SILICON SUBSTRATE FOR SOLAR BATTERY
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T07%3A46%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TOKUNAGA%20KATSUSHI&rft.date=2000-11-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2000327488A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true