MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device by which a Cu wiring layer formed as a lower wiring layer is not oxidized and, in addition, a via hole can be opened satisfactorily. SOLUTION: An interlayer insulating film 3 is formed on a Cu wiring layer 2 formed on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IWADE KENJI, MASE KOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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