MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To enable flatenning the surface of a substrate without reducing the thickness of an oxide film in an element isolation region having a trench structure, and restrain deterioration of element characteristic which is to be caused by dishing. SOLUTION: A first silicon nitride fil...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SATOU YUUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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