MIS FIELD EFFECT TRANSISTOR AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To provide a field effect transistor which is easily controlled in threshold voltage and provided with a gate electrode that is less depleted. SOLUTION: This transistor is equipped with gate electrode films 40 and 50 which are both of multilayered structure formed of conductive...

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1. Verfasser:	MOGAMI TORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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