TRENCH ELEMENT SOLATION METHOD FOR SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT USING THE SAME

PROBLEM TO BE SOLVED: To suppress occurrence of dents in a trench element isolation process by forming a trench etching mask pattern on a semiconductor substrate, forming over the entire surface of the semiconductor substrate, a dent-preventing film on the sidwall of the trench etching mask pattern,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KO INSHIAKU, KIN SEII, AHN DONG HUL, PARK MOON-HAN, RI KINSHU, KO YANSAN, BOKU TAISHO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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