TRENCH ELEMENT SOLATION METHOD FOR SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT USING THE SAME
PROBLEM TO BE SOLVED: To suppress occurrence of dents in a trench element isolation process by forming a trench etching mask pattern on a semiconductor substrate, forming over the entire surface of the semiconductor substrate, a dent-preventing film on the sidwall of the trench etching mask pattern,...
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| creator | KO INSHIAKU KIN SEII AHN DONG HUL PARK MOON-HAN RI KINSHU KO YANSAN BOKU TAISHO |
| description | PROBLEM TO BE SOLVED: To suppress occurrence of dents in a trench element isolation process by forming a trench etching mask pattern on a semiconductor substrate, forming over the entire surface of the semiconductor substrate, a dent-preventing film on the sidwall of the trench etching mask pattern, and depositing a liner layer on the dent-preventing film. SOLUTION: A part of a semiconductor substrate 100 is etched with a mask pattern 104 as a mask to form a trench 106, the inside wall of which is thermally oxidized to form an in-trench oxide film 108. A dent-preventing film 110 of a CVD oxide film with a film quality which has an etching selection ratio to a nitride film is deposited on the resulting object where the in-trench oxide film 108 is formed. After a liner layer 112 is formed using a nitride film, a high-temperature oxide film formed at such high temperature as 700-9000 deg.C is deposited, which is further treated with ammonia plasma processing. |
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SOLUTION: A part of a semiconductor substrate 100 is etched with a mask pattern 104 as a mask to form a trench 106, the inside wall of which is thermally oxidized to form an in-trench oxide film 108. A dent-preventing film 110 of a CVD oxide film with a film quality which has an etching selection ratio to a nitride film is deposited on the resulting object where the in-trench oxide film 108 is formed. After a liner layer 112 is formed using a nitride film, a high-temperature oxide film formed at such high temperature as 700-9000 deg.C is deposited, which is further treated with ammonia plasma processing.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000728&DB=EPODOC&CC=JP&NR=2000208609A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000728&DB=EPODOC&CC=JP&NR=2000208609A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KO INSHIAKU</creatorcontrib><creatorcontrib>KIN SEII</creatorcontrib><creatorcontrib>AHN DONG HUL</creatorcontrib><creatorcontrib>PARK MOON-HAN</creatorcontrib><creatorcontrib>RI KINSHU</creatorcontrib><creatorcontrib>KO YANSAN</creatorcontrib><creatorcontrib>BOKU TAISHO</creatorcontrib><title>TRENCH ELEMENT SOLATION METHOD FOR SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT USING THE SAME</title><description>PROBLEM TO BE SOLVED: To suppress occurrence of dents in a trench element isolation process by forming a trench etching mask pattern on a semiconductor substrate, forming over the entire surface of the semiconductor substrate, a dent-preventing film on the sidwall of the trench etching mask pattern, and depositing a liner layer on the dent-preventing film. SOLUTION: A part of a semiconductor substrate 100 is etched with a mask pattern 104 as a mask to form a trench 106, the inside wall of which is thermally oxidized to form an in-trench oxide film 108. A dent-preventing film 110 of a CVD oxide film with a film quality which has an etching selection ratio to a nitride film is deposited on the resulting object where the in-trench oxide film 108 is formed. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | TRENCH ELEMENT SOLATION METHOD FOR SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT USING THE SAME |
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