FLASH MEMORY CELL AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To provide a flash memory cell and its manufacturing method. SOLUTION: The first conductive film 103, with which the prescribed region of a semiconductor substrate 100 is exposed separately from a gate insulating film 102 and an element isolation film, is formed on the upper pa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NAN SHOYU, CHANG DONG-SOO, OH HEUNG-KWUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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