INSULATED GATE BIPOLAR TRANSISTOR MODULE HAVING RESISTANCE TO SHORT-CIRCUITING
PROBLEM TO BE SOLVED: To prevent short-circuit of individual chips from causing damages to the entire module, by forming an eutectic mixed material of a layer which is joined to main electrodes of a silicon semiconductor and which contains silver and silicon. SOLUTION: Semiconductor chips 4 have mai...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!