INSULATED GATE BIPOLAR TRANSISTOR MODULE HAVING RESISTANCE TO SHORT-CIRCUITING

PROBLEM TO BE SOLVED: To prevent short-circuit of individual chips from causing damages to the entire module, by forming an eutectic mixed material of a layer which is joined to main electrodes of a silicon semiconductor and which contains silver and silicon. SOLUTION: Semiconductor chips 4 have mai...

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Bibliographische Detailangaben
Hauptverfasser: LANG THOMAS DR, ZELLER HANS RUDOLF DR
Format: Patent
Sprache:eng
Schlagworte:
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