SPUTTERING EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING METHOD THEREFOR
PROBLEM TO BE SOLVED: To provide a sputtering equipment for manufacturing a semiconductor device and sputtering method therefor. SOLUTION: This sputtering equipment is provided with a process chamber 30 for executing sputtering process to a wafer, target 32 set so as to be separated from the wafer a...
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| creator | GO SEISHAKU BOKU JUNSEI KWACK GYU-HWAN |
| description | PROBLEM TO BE SOLVED: To provide a sputtering equipment for manufacturing a semiconductor device and sputtering method therefor. SOLUTION: This sputtering equipment is provided with a process chamber 30 for executing sputtering process to a wafer, target 32 set so as to be separated from the wafer at a prescribed interval on the upper side of the process chamber 30, backing plate 34 on whose lower face the target 32 can be mounted and which is equipped with a coolant gas tube through which coolant gas is circulated so that the target 32 can be cooled, and coolant gas supplying means for supplying the coolant gas to the coolant gas tube of the backing plate 34 for causing the coolant gas to circulate. Under the process condition of the sputtering method, a high power ranging from 15 kW to 45 kW is applied to the target 32, and argon gas ranging from 3SCCM to 10sccm is supplied to sputter the target 32, while the inside pressure is maintained in the range of 0.1 to 1m Torr. |
| format | Patent |
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SOLUTION: This sputtering equipment is provided with a process chamber 30 for executing sputtering process to a wafer, target 32 set so as to be separated from the wafer at a prescribed interval on the upper side of the process chamber 30, backing plate 34 on whose lower face the target 32 can be mounted and which is equipped with a coolant gas tube through which coolant gas is circulated so that the target 32 can be cooled, and coolant gas supplying means for supplying the coolant gas to the coolant gas tube of the backing plate 34 for causing the coolant gas to circulate. Under the process condition of the sputtering method, a high power ranging from 15 kW to 45 kW is applied to the target 32, and argon gas ranging from 3SCCM to 10sccm is supplied to sputter the target 32, while the inside pressure is maintained in the range of 0.1 to 1m Torr.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000303&DB=EPODOC&CC=JP&NR=2000068234A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000303&DB=EPODOC&CC=JP&NR=2000068234A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GO SEISHAKU</creatorcontrib><creatorcontrib>BOKU JUNSEI</creatorcontrib><creatorcontrib>KWACK GYU-HWAN</creatorcontrib><title>SPUTTERING EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING METHOD THEREFOR</title><description>PROBLEM TO BE SOLVED: To provide a sputtering equipment for manufacturing a semiconductor device and sputtering method therefor. 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Under the process condition of the sputtering method, a high power ranging from 15 kW to 45 kW is applied to the target 32, and argon gas ranging from 3SCCM to 10sccm is supplied to sputter the target 32, while the inside pressure is maintained in the range of 0.1 to 1m Torr.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgKDggNCXEN8vRzV3ANDPUM8HX1C1Fw8w9S8HX0C3VzdA4JBcsFu_p6Ovv7uYQ6hwDlXFzDPJ1dFRz9XBSQ9Pu6hnj4uyiEeLgGuQJN4GFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgZAYGZhZGziaEyUIgAg_DLm</recordid><startdate>20000303</startdate><enddate>20000303</enddate><creator>GO SEISHAKU</creator><creator>BOKU JUNSEI</creator><creator>KWACK GYU-HWAN</creator><scope>EVB</scope></search><sort><creationdate>20000303</creationdate><title>SPUTTERING EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING METHOD THEREFOR</title><author>GO SEISHAKU ; BOKU JUNSEI ; KWACK GYU-HWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000068234A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>GO SEISHAKU</creatorcontrib><creatorcontrib>BOKU JUNSEI</creatorcontrib><creatorcontrib>KWACK GYU-HWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GO SEISHAKU</au><au>BOKU JUNSEI</au><au>KWACK GYU-HWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPUTTERING EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING METHOD THEREFOR</title><date>2000-03-03</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To provide a sputtering equipment for manufacturing a semiconductor device and sputtering method therefor. SOLUTION: This sputtering equipment is provided with a process chamber 30 for executing sputtering process to a wafer, target 32 set so as to be separated from the wafer at a prescribed interval on the upper side of the process chamber 30, backing plate 34 on whose lower face the target 32 can be mounted and which is equipped with a coolant gas tube through which coolant gas is circulated so that the target 32 can be cooled, and coolant gas supplying means for supplying the coolant gas to the coolant gas tube of the backing plate 34 for causing the coolant gas to circulate. Under the process condition of the sputtering method, a high power ranging from 15 kW to 45 kW is applied to the target 32, and argon gas ranging from 3SCCM to 10sccm is supplied to sputter the target 32, while the inside pressure is maintained in the range of 0.1 to 1m Torr.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SPUTTERING EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING METHOD THEREFOR |
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