PROGRAMMABLE WRITE DRIVER CIRCUIT FOR WRITING INFORMATION TO MAGNETIC MEMORY MEDIUM
PROBLEM TO BE SOLVED: To optimize the write current rise time and overshoot of a write head by making the transistor of an in-phase mode circuit component element function as a resistor and changing its resistance. SOLUTION: The transistor(TR) of the in-phase mode circuit component element is operat...
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| creator | THELEN ROBERT M DAVIS BRADLEY K |
| description | PROBLEM TO BE SOLVED: To optimize the write current rise time and overshoot of a write head by making the transistor of an in-phase mode circuit component element function as a resistor and changing its resistance. SOLUTION: The transistor(TR) of the in-phase mode circuit component element is operated in a triode region and the resistance of the component element is changed by turning the TR by changeover logic on and off, to change the in-phase mode output voltage of the write driver circuit. The polarity of the write current is changed over by using inputs 21, 22 and the current source is changed over to on and off by the component elements 35, 53, 57, 58. The NMOS TRs 34, 38 constitute a high-speed mirror together with the resistor 36. Since the input impedance of the TR 34 is small, the current mirror stabilizes immediately after the changeover of the write current. An attenuation resistor 45 selects the write current rise time so as to optimize this time. |
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SOLUTION: The transistor(TR) of the in-phase mode circuit component element is operated in a triode region and the resistance of the component element is changed by turning the TR by changeover logic on and off, to change the in-phase mode output voltage of the write driver circuit. The polarity of the write current is changed over by using inputs 21, 22 and the current source is changed over to on and off by the component elements 35, 53, 57, 58. The NMOS TRs 34, 38 constitute a high-speed mirror together with the resistor 36. Since the input impedance of the TR 34 is small, the current mirror stabilizes immediately after the changeover of the write current. 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SOLUTION: The transistor(TR) of the in-phase mode circuit component element is operated in a triode region and the resistance of the component element is changed by turning the TR by changeover logic on and off, to change the in-phase mode output voltage of the write driver circuit. The polarity of the write current is changed over by using inputs 21, 22 and the current source is changed over to on and off by the component elements 35, 53, 57, 58. The NMOS TRs 34, 38 constitute a high-speed mirror together with the resistor 36. Since the input impedance of the TR 34 is small, the current mirror stabilizes immediately after the changeover of the write current. 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SOLUTION: The transistor(TR) of the in-phase mode circuit component element is operated in a triode region and the resistance of the component element is changed by turning the TR by changeover logic on and off, to change the in-phase mode output voltage of the write driver circuit. The polarity of the write current is changed over by using inputs 21, 22 and the current source is changed over to on and off by the component elements 35, 53, 57, 58. The NMOS TRs 34, 38 constitute a high-speed mirror together with the resistor 36. Since the input impedance of the TR 34 is small, the current mirror stabilizes immediately after the changeover of the write current. An attenuation resistor 45 selects the write current rise time so as to optimize this time.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER PHYSICS PULSE TECHNIQUE |
| title | PROGRAMMABLE WRITE DRIVER CIRCUIT FOR WRITING INFORMATION TO MAGNETIC MEMORY MEDIUM |
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