DRY CLEANING METHOD AFTER METAL ETCHING

PROBLEM TO BE SOLVED: To provide a method by which a metal-contaminated resist and sidewall polymer can be removed from a semiconductor device, particularly metallic conductors without using wet chemical solvents nor raising the temperature. SOLUTION: In a dry cleaning method, a resist is provided on a plurality of portions of a metal layer formed on a semiconductor device and the metal layer is etched, and after the remaining metal-contaminated resistor is ashed through reactive ion etching(RIE), downstream type microwave process is performed so as to make the remaining resist easily removable.