METHOD FOR MEASURING SURFACE AREA CHANGE RATIO OF POLYSILICON THIN FILM HAVING HEMISPHERICAL GRAIN, AND METHOD AND DEVICE FOR MEASURING CAPACITANCE USING THE SAME

PROBLEM TO BE SOLVED: To accurately acquire a surface area change ratio, by a method wherein a polysilicon thin film having a hemispherical grain is formed, and an area change ratio is calculated by measuring a height and a porosity of the hemispherical grain. SOLUTION: A polysilicon thin film havin...

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Hauptverfasser:	SHIN SHIYOUYU, GO DOSEI, YANA KOUZEN, WOO SANG H, KAN ITSUKON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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