METHOD FOR MEASURING SURFACE AREA CHANGE RATIO OF POLYSILICON THIN FILM HAVING HEMISPHERICAL GRAIN, AND METHOD AND DEVICE FOR MEASURING CAPACITANCE USING THE SAME
PROBLEM TO BE SOLVED: To accurately acquire a surface area change ratio, by a method wherein a polysilicon thin film having a hemispherical grain is formed, and an area change ratio is calculated by measuring a height and a porosity of the hemispherical grain. SOLUTION: A polysilicon thin film havin...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SHIN SHIYOUYU GO DOSEI YANA KOUZEN WOO SANG H KAN ITSUKON |
| description | PROBLEM TO BE SOLVED: To accurately acquire a surface area change ratio, by a method wherein a polysilicon thin film having a hemispherical grain is formed, and an area change ratio is calculated by measuring a height and a porosity of the hemispherical grain. SOLUTION: A polysilicon thin film having a hemispherical grain is formed, and a height (t) and a porosity (fν) of the hemispherical grain of the polysilicon thin film are measured, and these are substituted for formula I to calculate an area change ratio CE. And, a thickness (d) of a dielectric film as a capacitor, a dielectric constant ( ) and an area change ratio CE are substituted for formula II, to calculate a capacitance change ratio Cr. Thus, prior to completion of the capacitor, a change of capacitance can accurately be known. Incidentally, the area change ratio is monitored near to an actual value at a stage of forming the hemispherical grain on a surface of the polysilicon thin film, whereby it is possible to enhance reliability and a manufacturing yield of the capacitor. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2000003949A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2000003949A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2000003949A3</originalsourceid><addsrcrecordid>eNqNjb0KwkAQhNNYiPoOi7WCGBvL5bKXW7mfcHcJWIUgZyUaiE_kk5pAGjun-YbZn1lmH0NRuQKk82AIQ-3ZljBCoiBATwhCoS0JPEZ24CRUTl8DaxbOQlRsQbI2oLCZLhUZDpUizwI1lB7Z7gBtAXPPZAtqeHz-WymwQsER7Tipw5RERRDQ0Dpb3LvHkDYzV9lWUhRqn_pXm4a-u6VnereX6niYlJ9PZ8z_WvoCDOZFDA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MEASURING SURFACE AREA CHANGE RATIO OF POLYSILICON THIN FILM HAVING HEMISPHERICAL GRAIN, AND METHOD AND DEVICE FOR MEASURING CAPACITANCE USING THE SAME</title><source>esp@cenet</source><creator>SHIN SHIYOUYU ; GO DOSEI ; YANA KOUZEN ; WOO SANG H ; KAN ITSUKON</creator><creatorcontrib>SHIN SHIYOUYU ; GO DOSEI ; YANA KOUZEN ; WOO SANG H ; KAN ITSUKON</creatorcontrib><description>PROBLEM TO BE SOLVED: To accurately acquire a surface area change ratio, by a method wherein a polysilicon thin film having a hemispherical grain is formed, and an area change ratio is calculated by measuring a height and a porosity of the hemispherical grain. SOLUTION: A polysilicon thin film having a hemispherical grain is formed, and a height (t) and a porosity (fν) of the hemispherical grain of the polysilicon thin film are measured, and these are substituted for formula I to calculate an area change ratio CE. And, a thickness (d) of a dielectric film as a capacitor, a dielectric constant ( ) and an area change ratio CE are substituted for formula II, to calculate a capacitance change ratio Cr. Thus, prior to completion of the capacitor, a change of capacitance can accurately be known. Incidentally, the area change ratio is monitored near to an actual value at a stage of forming the hemispherical grain on a surface of the polysilicon thin film, whereby it is possible to enhance reliability and a manufacturing yield of the capacitor.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000107&DB=EPODOC&CC=JP&NR=2000003949A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000107&DB=EPODOC&CC=JP&NR=2000003949A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIN SHIYOUYU</creatorcontrib><creatorcontrib>GO DOSEI</creatorcontrib><creatorcontrib>YANA KOUZEN</creatorcontrib><creatorcontrib>WOO SANG H</creatorcontrib><creatorcontrib>KAN ITSUKON</creatorcontrib><title>METHOD FOR MEASURING SURFACE AREA CHANGE RATIO OF POLYSILICON THIN FILM HAVING HEMISPHERICAL GRAIN, AND METHOD AND DEVICE FOR MEASURING CAPACITANCE USING THE SAME</title><description>PROBLEM TO BE SOLVED: To accurately acquire a surface area change ratio, by a method wherein a polysilicon thin film having a hemispherical grain is formed, and an area change ratio is calculated by measuring a height and a porosity of the hemispherical grain. SOLUTION: A polysilicon thin film having a hemispherical grain is formed, and a height (t) and a porosity (fν) of the hemispherical grain of the polysilicon thin film are measured, and these are substituted for formula I to calculate an area change ratio CE. And, a thickness (d) of a dielectric film as a capacitor, a dielectric constant ( ) and an area change ratio CE are substituted for formula II, to calculate a capacitance change ratio Cr. Thus, prior to completion of the capacitor, a change of capacitance can accurately be known. Incidentally, the area change ratio is monitored near to an actual value at a stage of forming the hemispherical grain on a surface of the polysilicon thin film, whereby it is possible to enhance reliability and a manufacturing yield of the capacitor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjb0KwkAQhNNYiPoOi7WCGBvL5bKXW7mfcHcJWIUgZyUaiE_kk5pAGjun-YbZn1lmH0NRuQKk82AIQ-3ZljBCoiBATwhCoS0JPEZ24CRUTl8DaxbOQlRsQbI2oLCZLhUZDpUizwI1lB7Z7gBtAXPPZAtqeHz-WymwQsER7Tipw5RERRDQ0Dpb3LvHkDYzV9lWUhRqn_pXm4a-u6VnereX6niYlJ9PZ8z_WvoCDOZFDA</recordid><startdate>20000107</startdate><enddate>20000107</enddate><creator>SHIN SHIYOUYU</creator><creator>GO DOSEI</creator><creator>YANA KOUZEN</creator><creator>WOO SANG H</creator><creator>KAN ITSUKON</creator><scope>EVB</scope></search><sort><creationdate>20000107</creationdate><title>METHOD FOR MEASURING SURFACE AREA CHANGE RATIO OF POLYSILICON THIN FILM HAVING HEMISPHERICAL GRAIN, AND METHOD AND DEVICE FOR MEASURING CAPACITANCE USING THE SAME</title><author>SHIN SHIYOUYU ; GO DOSEI ; YANA KOUZEN ; WOO SANG H ; KAN ITSUKON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2000003949A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIN SHIYOUYU</creatorcontrib><creatorcontrib>GO DOSEI</creatorcontrib><creatorcontrib>YANA KOUZEN</creatorcontrib><creatorcontrib>WOO SANG H</creatorcontrib><creatorcontrib>KAN ITSUKON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIN SHIYOUYU</au><au>GO DOSEI</au><au>YANA KOUZEN</au><au>WOO SANG H</au><au>KAN ITSUKON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MEASURING SURFACE AREA CHANGE RATIO OF POLYSILICON THIN FILM HAVING HEMISPHERICAL GRAIN, AND METHOD AND DEVICE FOR MEASURING CAPACITANCE USING THE SAME</title><date>2000-01-07</date><risdate>2000</risdate><abstract>PROBLEM TO BE SOLVED: To accurately acquire a surface area change ratio, by a method wherein a polysilicon thin film having a hemispherical grain is formed, and an area change ratio is calculated by measuring a height and a porosity of the hemispherical grain. SOLUTION: A polysilicon thin film having a hemispherical grain is formed, and a height (t) and a porosity (fν) of the hemispherical grain of the polysilicon thin film are measured, and these are substituted for formula I to calculate an area change ratio CE. And, a thickness (d) of a dielectric film as a capacitor, a dielectric constant ( ) and an area change ratio CE are substituted for formula II, to calculate a capacitance change ratio Cr. Thus, prior to completion of the capacitor, a change of capacitance can accurately be known. Incidentally, the area change ratio is monitored near to an actual value at a stage of forming the hemispherical grain on a surface of the polysilicon thin film, whereby it is possible to enhance reliability and a manufacturing yield of the capacitor.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2000003949A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | METHOD FOR MEASURING SURFACE AREA CHANGE RATIO OF POLYSILICON THIN FILM HAVING HEMISPHERICAL GRAIN, AND METHOD AND DEVICE FOR MEASURING CAPACITANCE USING THE SAME |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T10%3A49%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIN%20SHIYOUYU&rft.date=2000-01-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2000003949A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |