FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CON RIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE
Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry...
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creator | SEVERGNINI CARLO PANSANA PIETRO RAVAZZI LEONARDO |
description | Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry areas are preserved from the danger of breaking the tunnel oxide, thus avoiding the degradation of the quality of the oxides and increasing, in addition, the level of reliability of the device itself. |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CON RIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE |
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