FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CON RIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE

Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry...

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Hauptverfasser: SEVERGNINI CARLO, PANSANA PIETRO, RAVAZZI LEONARDO
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creator SEVERGNINI CARLO
PANSANA PIETRO
RAVAZZI LEONARDO
description Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide in the NO-DPCC diagram including a series of steps that permit the removal of the oxide in two distinct moments from the matrix area and from the circuitry area. In this manner the active circuitry areas are preserved from the danger of breaking the tunnel oxide, thus avoiding the degradation of the quality of the oxides and increasing, in addition, the level of reliability of the device itself.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FLUSSO DI PROCESSO PER LA REALIZZAZIONE DI MEMORIE NON VOLATILI CON RIMOZIONE DIFFERENZIATA DELL'OSSIDO SACRIFICALE
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