PROCEDIMENTO PER L'OTTENIMENTO DI QUARZO ALFA A FINE CRISTALLIZZAZIONE
Fine-crystalline alpha-quartz of crystal size 0.08-0.8 mm is obtd. by crystallising amorphous SiO2 in a water vapour atmos. in the presence of a crystallisation promoter (I) at 300-500 deg.C and pressure 20-400 atmos. for 5-100 hrs. (I) is a basic material used in an amt. 0.001-1 wt.% an amorphous S...
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| creator | IGOR LEONIDOVICH VOROSHILOV GALINA PAVLOVNA BUDOVA VLADIMIR MOISEEVICH GAVRILKO VALERY ABRAMOVICH KREISBERG VLADISLAV BORISOVICH LAZAREV SERGEI NIKOLAEVICH TORBIN GEORGY PAVLOVICH PANASJUK VLADIMIR ALEXEEVICH ONAIKO MARINA NIKOLAEVNA DANCHEVSKAYA |
| description | Fine-crystalline alpha-quartz of crystal size 0.08-0.8 mm is obtd. by crystallising amorphous SiO2 in a water vapour atmos. in the presence of a crystallisation promoter (I) at 300-500 deg.C and pressure 20-400 atmos. for 5-100 hrs. (I) is a basic material used in an amt. 0.001-1 wt.% an amorphous SiO2 wt. (I) is pref. an alkali metal hydroxide used in an amt. (on wt.% of amorphous SiO2) 0.001-0.1, NH4OH or a quat. ammonium base used in an amt. 0.02-1; polyelectrolyte-polyethylene-imines of mol. wt. 190-50.000 used in an amt. 0.001-0.1, or hydrazine (alkyl deriv.) used in an amt. 0.02-1. |
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(I) is a basic material used in an amt. 0.001-1 wt.% an amorphous SiO2 wt. (I) is pref. an alkali metal hydroxide used in an amt. (on wt.% of amorphous SiO2) 0.001-0.1, NH4OH or a quat. ammonium base used in an amt. 0.02-1; polyelectrolyte-polyethylene-imines of mol. wt. 190-50.000 used in an amt. 0.001-0.1, or hydrazine (alkyl deriv.) used in an amt. 0.02-1.</description><edition>3</edition><language>ita</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1983</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19830525&DB=EPODOC&CC=IT&NR=8341570A0$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19830525&DB=EPODOC&CC=IT&NR=8341570A0$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IGOR LEONIDOVICH VOROSHILOV</creatorcontrib><creatorcontrib>GALINA PAVLOVNA BUDOVA</creatorcontrib><creatorcontrib>VLADIMIR MOISEEVICH GAVRILKO</creatorcontrib><creatorcontrib>VALERY ABRAMOVICH KREISBERG</creatorcontrib><creatorcontrib>VLADISLAV BORISOVICH LAZAREV</creatorcontrib><creatorcontrib>SERGEI NIKOLAEVICH TORBIN</creatorcontrib><creatorcontrib>GEORGY PAVLOVICH PANASJUK</creatorcontrib><creatorcontrib>VLADIMIR ALEXEEVICH ONAIKO</creatorcontrib><creatorcontrib>MARINA NIKOLAEVNA DANCHEVSKAYA</creatorcontrib><title>PROCEDIMENTO PER L'OTTENIMENTO DI QUARZO ALFA A FINE CRISTALLIZZAZIONE</title><description>Fine-crystalline alpha-quartz of crystal size 0.08-0.8 mm is obtd. by crystallising amorphous SiO2 in a water vapour atmos. in the presence of a crystallisation promoter (I) at 300-500 deg.C and pressure 20-400 atmos. for 5-100 hrs. (I) is a basic material used in an amt. 0.001-1 wt.% an amorphous SiO2 wt. (I) is pref. an alkali metal hydroxide used in an amt. (on wt.% of amorphous SiO2) 0.001-0.1, NH4OH or a quat. ammonium base used in an amt. 0.02-1; polyelectrolyte-polyethylene-imines of mol. wt. 190-50.000 used in an amt. 0.001-0.1, or hydrazine (alkyl deriv.) used in an amt. 0.02-1.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1983</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHALCPJ3dnXx9HX1C_FXCHANUvBR9w8JcfWDirh4KgSGOgZF-Ss4-rg5KjgquHn6uSo4B3kGhzj6-HhGRTlGefr7ufIwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjPEAtjE0NTcwNHA2MilAAAaRYsGw</recordid><startdate>19830525</startdate><enddate>19830525</enddate><creator>IGOR LEONIDOVICH VOROSHILOV</creator><creator>GALINA PAVLOVNA BUDOVA</creator><creator>VLADIMIR MOISEEVICH GAVRILKO</creator><creator>VALERY ABRAMOVICH KREISBERG</creator><creator>VLADISLAV BORISOVICH LAZAREV</creator><creator>SERGEI NIKOLAEVICH TORBIN</creator><creator>GEORGY PAVLOVICH PANASJUK</creator><creator>VLADIMIR ALEXEEVICH ONAIKO</creator><creator>MARINA NIKOLAEVNA DANCHEVSKAYA</creator><scope>EVB</scope></search><sort><creationdate>19830525</creationdate><title>PROCEDIMENTO PER L'OTTENIMENTO DI QUARZO ALFA A FINE CRISTALLIZZAZIONE</title><author>IGOR LEONIDOVICH VOROSHILOV ; GALINA PAVLOVNA BUDOVA ; VLADIMIR MOISEEVICH GAVRILKO ; VALERY ABRAMOVICH KREISBERG ; VLADISLAV BORISOVICH LAZAREV ; SERGEI NIKOLAEVICH TORBIN ; GEORGY PAVLOVICH PANASJUK ; VLADIMIR ALEXEEVICH ONAIKO ; MARINA NIKOLAEVNA DANCHEVSKAYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_IT8341570A03</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ita</language><creationdate>1983</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>IGOR LEONIDOVICH VOROSHILOV</creatorcontrib><creatorcontrib>GALINA PAVLOVNA BUDOVA</creatorcontrib><creatorcontrib>VLADIMIR MOISEEVICH GAVRILKO</creatorcontrib><creatorcontrib>VALERY ABRAMOVICH KREISBERG</creatorcontrib><creatorcontrib>VLADISLAV BORISOVICH LAZAREV</creatorcontrib><creatorcontrib>SERGEI NIKOLAEVICH TORBIN</creatorcontrib><creatorcontrib>GEORGY PAVLOVICH PANASJUK</creatorcontrib><creatorcontrib>VLADIMIR ALEXEEVICH ONAIKO</creatorcontrib><creatorcontrib>MARINA NIKOLAEVNA DANCHEVSKAYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IGOR LEONIDOVICH VOROSHILOV</au><au>GALINA PAVLOVNA BUDOVA</au><au>VLADIMIR MOISEEVICH GAVRILKO</au><au>VALERY ABRAMOVICH KREISBERG</au><au>VLADISLAV BORISOVICH LAZAREV</au><au>SERGEI NIKOLAEVICH TORBIN</au><au>GEORGY PAVLOVICH PANASJUK</au><au>VLADIMIR ALEXEEVICH ONAIKO</au><au>MARINA NIKOLAEVNA DANCHEVSKAYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCEDIMENTO PER L'OTTENIMENTO DI QUARZO ALFA A FINE CRISTALLIZZAZIONE</title><date>1983-05-25</date><risdate>1983</risdate><abstract>Fine-crystalline alpha-quartz of crystal size 0.08-0.8 mm is obtd. by crystallising amorphous SiO2 in a water vapour atmos. in the presence of a crystallisation promoter (I) at 300-500 deg.C and pressure 20-400 atmos. for 5-100 hrs. (I) is a basic material used in an amt. 0.001-1 wt.% an amorphous SiO2 wt. (I) is pref. an alkali metal hydroxide used in an amt. (on wt.% of amorphous SiO2) 0.001-0.1, NH4OH or a quat. ammonium base used in an amt. 0.02-1; polyelectrolyte-polyethylene-imines of mol. wt. 190-50.000 used in an amt. 0.001-0.1, or hydrazine (alkyl deriv.) used in an amt. 0.02-1.</abstract><edition>3</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PROCEDIMENTO PER L'OTTENIMENTO DI QUARZO ALFA A FINE CRISTALLIZZAZIONE |
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