PROCEDIMENTO DI FABBRICAZIONE DI UN DISPOSITIVO SEMICONDUTTORE IN CARBURO DI SILICIO CON MIGLIORATE CARATTERISTICHE

PROCEDIMENTO DI FABBRICAZIONE DI UN DISPOSITIVO SEMICONDUTTORE IN CARBURO DI SILICIO CON MIGLIORATE CARATTERISTICHE

A process for manufacturing a silicon carbide semiconductor device envisages the steps of: providing a silicon carbide wafer (21), having a substrate (22); and carrying out an epitaxial growth for formation of an epitaxial layer (23), having a top surface (23a), on the substrate (22). Following upon...

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Bibliographische Detailangaben
Hauptverfasser: RINALDI, STEFANIA, MAZZEO, ANGELO ANNIBALE, FRANCO, GIOVANNI, SEVERINO, ANDREA, PILUSO, NICOLO, RUSSO, ALFIO, BASSI, ANNA, CAUDO, LEONARDO
Format: Patent
Sprache:ita
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A process for manufacturing a silicon carbide semiconductor device envisages the steps of: providing a silicon carbide wafer (21), having a substrate (22); and carrying out an epitaxial growth for formation of an epitaxial layer (23), having a top surface (23a), on the substrate (22). Following upon the step of carrying out an epitaxial growth, the process envisages the step of removing a surface portion of the epitaxial layer (23) starting from the top surface (23a) so as to remove surface damages present at the top surface (23a) as a result of propagation of dislocations (24) from the substrate (22) during the previous epitaxial growth and so as to define a resulting top surface (23a') substantially free of defects.