APPARECCHIO PER LA CRESCITA DI UNA FETTA DI MATERIALE SEMICONDUTTORE, IN PARTICOLARE DI CARBURO DI SILICIO, E PROCEDIMENTO DI FABBRICAZIONE ASSOCIATO

APPARECCHIO PER LA CRESCITA DI UNA FETTA DI MATERIALE SEMICONDUTTORE, IN PARTICOLARE DI CARBURO DI SILICIO, E PROCEDIMENTO DI FABBRICAZIONE ASSOCIATO

An apparatus (10) for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber (24) houses a collection container (22) and a support or susceptor (20) arranged over the collection container. The support (20) is formed by a frame (26) surrounding an opening (28) accommodating...

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Hauptverfasser: FRAZZETTO, NICOLO, ANZALONE, RUGGERO, LA VIA, FRANCESCO
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ANZALONE, RUGGERO
LA VIA, FRANCESCO
description An apparatus (10) for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber (24) houses a collection container (22) and a support or susceptor (20) arranged over the collection container. The support (20) is formed by a frame (26) surrounding an opening (28) accommodating a plurality of arms (30) and a seat (48). The frame (26) has a first a second surface (26D, 26C), opposite to each other, with the first surface (26D) of the frame facing the collection container (220). The arms (30) are formed by cantilever bars extending from the frame (26) into the opening (28), having a maximum height smaller than the frame, and having at the top a resting edge (43). The resting edges of the arms define a resting surface (44) that is at a lower level than the second surface (26C) of the frame. The seat (48) has a bottom formed by the resting surface (44).
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title APPARECCHIO PER LA CRESCITA DI UNA FETTA DI MATERIALE SEMICONDUTTORE, IN PARTICOLARE DI CARBURO DI SILICIO, E PROCEDIMENTO DI FABBRICAZIONE ASSOCIATO
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