DISPOSITIVO MOSFET DI POTENZA A SUPER GIUNZIONE CON AFFIDABILITA' MIGLIORATA, E METODO DI FABBRICAZIONE

A vertical-conduction MOSFET device, includes: a semiconductor body, having a front side and a back side and having a first conductivity; a trench-gate region; a body region, having the first conductivity; a source region, having a second conductivity; and a drain region, having the second conductiv...

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Bibliographische Detailangaben

Hauptverfasser:	GRIMALDI, ANTONIO GIUSEPPE, CINA', GIUSEPPE, ARCURI, LUIGI
Format:	Patent
Sprache:	ita
Online-Zugang:	Volltext bestellen
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