MEMORIA A CAMBIAMENTO DI FASE CON SELETTORI IN TECNOLOGIA BJT E RELATIVO METODO DI LETTURA DIFFERENZIALE

A phase-change memory device includes a memory array including a first memory cell and a second memory cell, each comprising a phase-change element and a selector, connected respectively to a first local bitline and a second local bitline, which are in turn connected, respectively, to a first main b...

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1. Verfasser:	CONTE, ANTONINO
Format:	Patent
Sprache:	ita
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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