Improved methods of control of epitaxial speed of growth in vertical reactors with rotating susceptors

In order to reduce the harmful effects of convection movements due to temperature gradients in the mass of reactive gases surrounding a rotating susceptor 32 in an epitaxial reactor 10, use is made of obstacles of short length 76 placed longitudinally on the edges of the rotating susceptor 32 and ob...

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1. Verfasser:	POZZETTI VITTORIO
Format:	Patent
Sprache:	eng ; ita
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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