Metal oxide semiconductor (MOS) circuit arrangement for switching high voltages on a semiconductor chip
The MOS circuit configuration allows switching high voltages on a semiconductor chip. In order to switch a high negative voltage, for example as a programming voltage on the word line of a flash-memory, two circuit variants are given which are formed only with transistors of the same conductivity ty...
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| creator | TEMPLL, GEORG HANNEBERG ARMIN |
| description | The MOS circuit configuration allows switching high voltages on a semiconductor chip. In order to switch a high negative voltage, for example as a programming voltage on the word line of a flash-memory, two circuit variants are given which are formed only with transistors of the same conductivity type as the substrate. The substrate and the transistors formed in the well are p-conductive. In this way it is possible to dispense with deep insulating wells which require special technology. |
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In order to switch a high negative voltage, for example as a programming voltage on the word line of a flash-memory, two circuit variants are given which are formed only with transistors of the same conductivity type as the substrate. The substrate and the transistors formed in the well are p-conductive. In this way it is possible to dispense with deep insulating wells which require special technology.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY INFORMATION STORAGE PHYSICS PULSE TECHNIQUE STATIC STORES |
| title | Metal oxide semiconductor (MOS) circuit arrangement for switching high voltages on a semiconductor chip |
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