BACK CONTACT PASTE WITH TE ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES

BACK CONTACT PASTE WITH TE ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES

Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p type absorber layer (of cadmium telluride) of a p n junction; and curing the conductive paste to form a conductive coating on the surf...

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Hauptverfasser: LUCAS TAMMY JANE, SADEGHI MEHRAN, TRENTLER TIMOTHY JOHN, METZGER WYATT KEITH, COLE MICHAEL CHRISTOPHER, CLARK LAURA ANNE, CORWINE CAROLINE RAE
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LUCAS TAMMY JANE
SADEGHI MEHRAN
TRENTLER TIMOTHY JOHN
METZGER WYATT KEITH
COLE MICHAEL CHRISTOPHER
CLARK LAURA ANNE
CORWINE CAROLINE RAE
description Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p type absorber layer (of cadmium telluride) of a p n junction; and curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing. The conductive paste can comprises a conductive material an optional solvent system and a binder. Thin film photovoltaic devices are also provided such as those that have a conductive coating that is substantially free from an acid.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_IN1840DELNP2015A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>IN1840DELNP2015A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_IN1840DELNP2015A3</originalsourceid><addsrcrecordid>eNqNyj0KwkAQQOFtLES9wzSWQuIPpF0nE3ZwM7skQyxDkLUSDcT7YxAPYPO-5i1NOFu8AAZRiwrRtkpwZXUwS9IwuppEv0MTPLCAujkV-xqiCxq64NUyQkkdI7Vrs7gPjyltfq7MtiJFt0vjq0_TONzSM717lrw4ZiV5ifssP9nDv98Ht2cxKA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BACK CONTACT PASTE WITH TE ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES</title><source>esp@cenet</source><creator>LUCAS TAMMY JANE ; SADEGHI MEHRAN ; TRENTLER TIMOTHY JOHN ; METZGER WYATT KEITH ; COLE MICHAEL CHRISTOPHER ; CLARK LAURA ANNE ; CORWINE CAROLINE RAE</creator><creatorcontrib>LUCAS TAMMY JANE ; SADEGHI MEHRAN ; TRENTLER TIMOTHY JOHN ; METZGER WYATT KEITH ; COLE MICHAEL CHRISTOPHER ; CLARK LAURA ANNE ; CORWINE CAROLINE RAE</creatorcontrib><description>Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p type absorber layer (of cadmium telluride) of a p n junction; and curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing. The conductive paste can comprises a conductive material an optional solvent system and a binder. Thin film photovoltaic devices are also provided such as those that have a conductive coating that is substantially free from an acid.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150529&amp;DB=EPODOC&amp;CC=IN&amp;NR=1840DEN2015A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150529&amp;DB=EPODOC&amp;CC=IN&amp;NR=1840DEN2015A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LUCAS TAMMY JANE</creatorcontrib><creatorcontrib>SADEGHI MEHRAN</creatorcontrib><creatorcontrib>TRENTLER TIMOTHY JOHN</creatorcontrib><creatorcontrib>METZGER WYATT KEITH</creatorcontrib><creatorcontrib>COLE MICHAEL CHRISTOPHER</creatorcontrib><creatorcontrib>CLARK LAURA ANNE</creatorcontrib><creatorcontrib>CORWINE CAROLINE RAE</creatorcontrib><title>BACK CONTACT PASTE WITH TE ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES</title><description>Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p type absorber layer (of cadmium telluride) of a p n junction; and curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing. The conductive paste can comprises a conductive material an optional solvent system and a binder. Thin film photovoltaic devices are also provided such as those that have a conductive coating that is substantially free from an acid.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyj0KwkAQQOFtLES9wzSWQuIPpF0nE3ZwM7skQyxDkLUSDcT7YxAPYPO-5i1NOFu8AAZRiwrRtkpwZXUwS9IwuppEv0MTPLCAujkV-xqiCxq64NUyQkkdI7Vrs7gPjyltfq7MtiJFt0vjq0_TONzSM717lrw4ZiV5ifssP9nDv98Ht2cxKA</recordid><startdate>20150529</startdate><enddate>20150529</enddate><creator>LUCAS TAMMY JANE</creator><creator>SADEGHI MEHRAN</creator><creator>TRENTLER TIMOTHY JOHN</creator><creator>METZGER WYATT KEITH</creator><creator>COLE MICHAEL CHRISTOPHER</creator><creator>CLARK LAURA ANNE</creator><creator>CORWINE CAROLINE RAE</creator><scope>EVB</scope></search><sort><creationdate>20150529</creationdate><title>BACK CONTACT PASTE WITH TE ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES</title><author>LUCAS TAMMY JANE ; SADEGHI MEHRAN ; TRENTLER TIMOTHY JOHN ; METZGER WYATT KEITH ; COLE MICHAEL CHRISTOPHER ; CLARK LAURA ANNE ; CORWINE CAROLINE RAE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_IN1840DELNP2015A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LUCAS TAMMY JANE</creatorcontrib><creatorcontrib>SADEGHI MEHRAN</creatorcontrib><creatorcontrib>TRENTLER TIMOTHY JOHN</creatorcontrib><creatorcontrib>METZGER WYATT KEITH</creatorcontrib><creatorcontrib>COLE MICHAEL CHRISTOPHER</creatorcontrib><creatorcontrib>CLARK LAURA ANNE</creatorcontrib><creatorcontrib>CORWINE CAROLINE RAE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LUCAS TAMMY JANE</au><au>SADEGHI MEHRAN</au><au>TRENTLER TIMOTHY JOHN</au><au>METZGER WYATT KEITH</au><au>COLE MICHAEL CHRISTOPHER</au><au>CLARK LAURA ANNE</au><au>CORWINE CAROLINE RAE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BACK CONTACT PASTE WITH TE ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES</title><date>2015-05-29</date><risdate>2015</risdate><abstract>Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p type absorber layer (of cadmium telluride) of a p n junction; and curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing. The conductive paste can comprises a conductive material an optional solvent system and a binder. Thin film photovoltaic devices are also provided such as those that have a conductive coating that is substantially free from an acid.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title BACK CONTACT PASTE WITH TE ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T05%3A34%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LUCAS%20TAMMY%20JANE&rft.date=2015-05-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EIN1840DELNP2015A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true