IMPROVED PHOTOVOLTAIC DEVICE HAVING INCIDENT RADIATION DIRECTING MEANS FOR TOTAL INTERNAL REFLECTION

There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SING RAJENDRA, ALLRED DAVID D, REYES JAIME M, CZUBATYL WOLODYMYR, DOEHLER JOACHIM
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SING RAJENDRA
ALLRED DAVID D
REYES JAIME M
CZUBATYL WOLODYMYR
DOEHLER JOACHIM
description There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies. The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light. While the present invention is applicable to photovoltaic devices formed from any type of semiconductor material, as for example, crystalline, polycrystalline, or amorphous semiconductor alloys or any combination thereof, disclosure herein is primarily directed to photovoltaic devices formed from amorphous silicon alloys preferably incorporating fluorine as a density of states reducing element. The disclosure is also directed to, without limitation, photovoltaic devices of the p-i-n configuration, both as single cells and multiple cells arranged in tandem.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_IN157618B</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>IN157618B</sourcerecordid><originalsourceid>FETCH-epo_espacenet_IN157618B3</originalsourceid><addsrcrecordid>eNqFyrsKwkAQheFtLER9BZkXsAjipd3sTszAZiasw7Yh6FqJBuL7YwL2VueH8y3NnZo2SkIPbS0qSYJacuAxkUOobSK-ALEjj6wQrSerJAyeIjqdzwYtX6GSCCpqw4QVI08RsQqzEV6bxaN_jnnz25XZVqiu3uXh3eVx6G_5lT8dcXE4HYtzuf8LvkivM6M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>IMPROVED PHOTOVOLTAIC DEVICE HAVING INCIDENT RADIATION DIRECTING MEANS FOR TOTAL INTERNAL REFLECTION</title><source>esp@cenet</source><creator>SING RAJENDRA ; ALLRED DAVID D ; REYES JAIME M ; CZUBATYL WOLODYMYR ; DOEHLER JOACHIM</creator><creatorcontrib>SING RAJENDRA ; ALLRED DAVID D ; REYES JAIME M ; CZUBATYL WOLODYMYR ; DOEHLER JOACHIM</creatorcontrib><description>There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies. The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light. While the present invention is applicable to photovoltaic devices formed from any type of semiconductor material, as for example, crystalline, polycrystalline, or amorphous semiconductor alloys or any combination thereof, disclosure herein is primarily directed to photovoltaic devices formed from amorphous silicon alloys preferably incorporating fluorine as a density of states reducing element. The disclosure is also directed to, without limitation, photovoltaic devices of the p-i-n configuration, both as single cells and multiple cells arranged in tandem.</description><edition>4</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1986</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19860503&amp;DB=EPODOC&amp;CC=IN&amp;NR=157618B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19860503&amp;DB=EPODOC&amp;CC=IN&amp;NR=157618B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SING RAJENDRA</creatorcontrib><creatorcontrib>ALLRED DAVID D</creatorcontrib><creatorcontrib>REYES JAIME M</creatorcontrib><creatorcontrib>CZUBATYL WOLODYMYR</creatorcontrib><creatorcontrib>DOEHLER JOACHIM</creatorcontrib><title>IMPROVED PHOTOVOLTAIC DEVICE HAVING INCIDENT RADIATION DIRECTING MEANS FOR TOTAL INTERNAL REFLECTION</title><description>There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies. The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light. While the present invention is applicable to photovoltaic devices formed from any type of semiconductor material, as for example, crystalline, polycrystalline, or amorphous semiconductor alloys or any combination thereof, disclosure herein is primarily directed to photovoltaic devices formed from amorphous silicon alloys preferably incorporating fluorine as a density of states reducing element. The disclosure is also directed to, without limitation, photovoltaic devices of the p-i-n configuration, both as single cells and multiple cells arranged in tandem.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1986</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFyrsKwkAQheFtLER9BZkXsAjipd3sTszAZiasw7Yh6FqJBuL7YwL2VueH8y3NnZo2SkIPbS0qSYJacuAxkUOobSK-ALEjj6wQrSerJAyeIjqdzwYtX6GSCCpqw4QVI08RsQqzEV6bxaN_jnnz25XZVqiu3uXh3eVx6G_5lT8dcXE4HYtzuf8LvkivM6M</recordid><startdate>19860503</startdate><enddate>19860503</enddate><creator>SING RAJENDRA</creator><creator>ALLRED DAVID D</creator><creator>REYES JAIME M</creator><creator>CZUBATYL WOLODYMYR</creator><creator>DOEHLER JOACHIM</creator><scope>EVB</scope></search><sort><creationdate>19860503</creationdate><title>IMPROVED PHOTOVOLTAIC DEVICE HAVING INCIDENT RADIATION DIRECTING MEANS FOR TOTAL INTERNAL REFLECTION</title><author>SING RAJENDRA ; ALLRED DAVID D ; REYES JAIME M ; CZUBATYL WOLODYMYR ; DOEHLER JOACHIM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_IN157618B3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1986</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SING RAJENDRA</creatorcontrib><creatorcontrib>ALLRED DAVID D</creatorcontrib><creatorcontrib>REYES JAIME M</creatorcontrib><creatorcontrib>CZUBATYL WOLODYMYR</creatorcontrib><creatorcontrib>DOEHLER JOACHIM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SING RAJENDRA</au><au>ALLRED DAVID D</au><au>REYES JAIME M</au><au>CZUBATYL WOLODYMYR</au><au>DOEHLER JOACHIM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMPROVED PHOTOVOLTAIC DEVICE HAVING INCIDENT RADIATION DIRECTING MEANS FOR TOTAL INTERNAL REFLECTION</title><date>1986-05-03</date><risdate>1986</risdate><abstract>There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies. The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light. While the present invention is applicable to photovoltaic devices formed from any type of semiconductor material, as for example, crystalline, polycrystalline, or amorphous semiconductor alloys or any combination thereof, disclosure herein is primarily directed to photovoltaic devices formed from amorphous silicon alloys preferably incorporating fluorine as a density of states reducing element. The disclosure is also directed to, without limitation, photovoltaic devices of the p-i-n configuration, both as single cells and multiple cells arranged in tandem.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_IN157618B
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title IMPROVED PHOTOVOLTAIC DEVICE HAVING INCIDENT RADIATION DIRECTING MEANS FOR TOTAL INTERNAL REFLECTION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T14%3A58%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SING%20RAJENDRA&rft.date=1986-05-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EIN157618B%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true