METHOD FOR PREPARING FILM STRUCTURE COMPRISING FERROELECTRIC SINGLE CRYSTAL LAYER
A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric sing...
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| creator | SANG-GOO LEE SUNGMIN RHIM JAEHWAN EUN BYUNGJU CHOI |
| description | A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate. |
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APPARATUS THEREFOR ; ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; LIME, MAGNESIA ; METALLURGY ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; REFRACTORIES ; RESONATORS ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SLAG ; TRANSPORTING ; TREATMENT OF NATURAL STONE ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060602&DB=EPODOC&CC=HK&NR=1082321A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060602&DB=EPODOC&CC=HK&NR=1082321A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SANG-GOO LEE</creatorcontrib><creatorcontrib>SUNGMIN RHIM</creatorcontrib><creatorcontrib>JAEHWAN EUN</creatorcontrib><creatorcontrib>BYUNGJU CHOI</creatorcontrib><title>METHOD FOR PREPARING FILM STRUCTURE COMPRISING FERROELECTRIC SINGLE CRYSTAL LAYER</title><description>A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>REFRACTORIES</subject><subject>RESONATORS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SLAG</subject><subject>TRANSPORTING</subject><subject>TREATMENT OF NATURAL STONE</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj0dQ3x8HdRcPMPUggIcg1wDPL0c1dw8_TxVQgOCQp1DgkNclVw9vcNCPIMBsu4BgX5u_q4OocEeTorgIR8gPJBkcEhjj4KPo6RrkE8DKxpiTnFqbxQmpsBqCnE2UM3tSA_PrW4IDE5NS-1JN7D29DAwsjYyNDR0JgIJQB9TC9M</recordid><startdate>20060602</startdate><enddate>20060602</enddate><creator>SANG-GOO LEE</creator><creator>SUNGMIN RHIM</creator><creator>JAEHWAN EUN</creator><creator>BYUNGJU CHOI</creator><scope>EVB</scope></search><sort><creationdate>20060602</creationdate><title>METHOD FOR PREPARING FILM STRUCTURE COMPRISING FERROELECTRIC SINGLE CRYSTAL LAYER</title><author>SANG-GOO LEE ; 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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS LIME, MAGNESIA METALLURGY MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES RESONATORS SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TRANSPORTING TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR PREPARING FILM STRUCTURE COMPRISING FERROELECTRIC SINGLE CRYSTAL LAYER |
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