Improvements in or relating to methods of forming p-n junctions in semiconductors

849,549. Semi-conductor devices. GENERAL ELECTRIC CO. Ltd. July 29, 1958 [Aug. 15, 1957], No. 25846/57. Class 37 A PN junction in a semi-conductor body is formed by heating a wire comprising significant impurity in contact with a semi-conductor body to form a molten alloy region and then cooling in...

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Bibliographische Detailangaben

Hauptverfasser:	MILLER JAMES SAMUEL, JAMES EMRYS GWYNNE, REEVES JOHN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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