Surface emitting laser devices and methods for manufacturing same
A photonic crystal surface emitting laser (PCSEL) device 20 comprises a semiconductor substrate located on a photonic crystal (PC) structure comprising a bulk medium having a first refractive index and an array of scattering centres located within the bulk medium, The scattering centres have a secon...
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creator | David Timothy Dylan Childs Richard James Edward Taylor Richard Hogg |
description | A photonic crystal surface emitting laser (PCSEL) device 20 comprises a semiconductor substrate located on a photonic crystal (PC) structure comprising a bulk medium having a first refractive index and an array of scattering centres located within the bulk medium, The scattering centres have a second refractive index different to the first refractive index and an active layer, optically coupled to the photonic crystal structure. The semiconductor substrate comprises a p-type semiconductor substrate. The device 20 in Figure 4 may have a 30% reduction in gain threshold value and a 50% L-I (slope efficiency) and higher out put power than that of the PCSEL presented in Figure 1. |
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The semiconductor substrate comprises a p-type semiconductor substrate. The device 20 in Figure 4 may have a 30% reduction in gain threshold value and a 50% L-I (slope efficiency) and higher out put power than that of the PCSEL presented in Figure 1.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240703&DB=EPODOC&CC=GB&NR=2625726A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240703&DB=EPODOC&CC=GB&NR=2625726A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>David Timothy Dylan Childs</creatorcontrib><creatorcontrib>Richard James Edward Taylor</creatorcontrib><creatorcontrib>Richard Hogg</creatorcontrib><title>Surface emitting laser devices and methods for manufacturing same</title><description>A photonic crystal surface emitting laser (PCSEL) device 20 comprises a semiconductor substrate located on a photonic crystal (PC) structure comprising a bulk medium having a first refractive index and an array of scattering centres located within the bulk medium, The scattering centres have a second refractive index different to the first refractive index and an active layer, optically coupled to the photonic crystal structure. The semiconductor substrate comprises a p-type semiconductor substrate. The device 20 in Figure 4 may have a 30% reduction in gain threshold value and a 50% L-I (slope efficiency) and higher out put power than that of the PCSEL presented in Figure 1.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAMLi1KS0xOVUjNzSwpycxLV8hJLE4tUkhJLctMTi1WSMxLUchNLcnITylWSMsvUshNzCsFqi8pLQKpLU7MTeVhYE1LzClO5YXS3Azybq4hzh66qQX58anFBUDD81JL4t2djMyMTM2NzByNCasAAFUeMPw</recordid><startdate>20240703</startdate><enddate>20240703</enddate><creator>David Timothy Dylan Childs</creator><creator>Richard James Edward Taylor</creator><creator>Richard Hogg</creator><scope>EVB</scope></search><sort><creationdate>20240703</creationdate><title>Surface emitting laser devices and methods for manufacturing same</title><author>David Timothy Dylan Childs ; Richard James Edward Taylor ; Richard Hogg</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_GB2625726A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>David Timothy Dylan Childs</creatorcontrib><creatorcontrib>Richard James Edward Taylor</creatorcontrib><creatorcontrib>Richard Hogg</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>David Timothy Dylan Childs</au><au>Richard James Edward Taylor</au><au>Richard Hogg</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Surface emitting laser devices and methods for manufacturing same</title><date>2024-07-03</date><risdate>2024</risdate><abstract>A photonic crystal surface emitting laser (PCSEL) device 20 comprises a semiconductor substrate located on a photonic crystal (PC) structure comprising a bulk medium having a first refractive index and an array of scattering centres located within the bulk medium, The scattering centres have a second refractive index different to the first refractive index and an active layer, optically coupled to the photonic crystal structure. The semiconductor substrate comprises a p-type semiconductor substrate. The device 20 in Figure 4 may have a 30% reduction in gain threshold value and a 50% L-I (slope efficiency) and higher out put power than that of the PCSEL presented in Figure 1.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
title | Surface emitting laser devices and methods for manufacturing same |
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