Semiconductor fabrication process

A local oxidation of silicon (LOCOS) in a region 30 of SOI substrate 4 partially oxidises 34 the silicon first epitaxial layer 10. Etching the SOI substrate 4 in region 30 creates a trench 16 through the buried oxide (BOX) layer 8 to the bulk silicon substrate 6. A second epitaxial layer 40 is forme...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Brice Grandchamp, Aude Berbezier, Rui Zhu, Nicolas Pons, Gregory U'ren, Raphael Lachaume
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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