Channelized filter using semiconductor fabrication
An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces conn...
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creator | Stephane Larouche Dah-Weih Duan Elizabeth T Kunkee |
description | An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_GB2612471A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>GB2612471A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_GB2612471A3</originalsourceid><addsrcrecordid>eNrjZDByzkjMy0vNyaxKTVFIy8wpSS1SKC3OzEtXKE7NzUzOz0spTS7JL1JIS0wqykxOLMnMz-NhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfHuTkZmhkYm5oaOxoRVAABdxivF</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Channelized filter using semiconductor fabrication</title><source>esp@cenet</source><creator>Stephane Larouche ; Dah-Weih Duan ; Elizabeth T Kunkee</creator><creatorcontrib>Stephane Larouche ; Dah-Weih Duan ; Elizabeth T Kunkee</creatorcontrib><description>An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRICITY ; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE ; WAVEGUIDES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230503&DB=EPODOC&CC=GB&NR=2612471A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230503&DB=EPODOC&CC=GB&NR=2612471A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Stephane Larouche</creatorcontrib><creatorcontrib>Dah-Weih Duan</creatorcontrib><creatorcontrib>Elizabeth T Kunkee</creatorcontrib><title>Channelized filter using semiconductor fabrication</title><description>An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRICITY</subject><subject>RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE</subject><subject>WAVEGUIDES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDByzkjMy0vNyaxKTVFIy8wpSS1SKC3OzEtXKE7NzUzOz0spTS7JL1JIS0wqykxOLMnMz-NhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfHuTkZmhkYm5oaOxoRVAABdxivF</recordid><startdate>20230503</startdate><enddate>20230503</enddate><creator>Stephane Larouche</creator><creator>Dah-Weih Duan</creator><creator>Elizabeth T Kunkee</creator><scope>EVB</scope></search><sort><creationdate>20230503</creationdate><title>Channelized filter using semiconductor fabrication</title><author>Stephane Larouche ; Dah-Weih Duan ; Elizabeth T Kunkee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_GB2612471A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRICITY</topic><topic>RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE</topic><topic>WAVEGUIDES</topic><toplevel>online_resources</toplevel><creatorcontrib>Stephane Larouche</creatorcontrib><creatorcontrib>Dah-Weih Duan</creatorcontrib><creatorcontrib>Elizabeth T Kunkee</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Stephane Larouche</au><au>Dah-Weih Duan</au><au>Elizabeth T Kunkee</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Channelized filter using semiconductor fabrication</title><date>2023-05-03</date><risdate>2023</risdate><abstract>An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRICITY RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE WAVEGUIDES |
title | Channelized filter using semiconductor fabrication |
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