Semiconductor etching methods

A method of etching into one or more epitaxial layers of III-V, III-N or II-VI semiconductor material(s) in a semiconductor structure 30 is disclosed. The semiconductor structure is a vertical cavity surface emitting laser (VCSEL, Figure 2), light-emitting diode (LED, Figure 4) or photodiode (Figure...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ligang Deng, Katie Hore
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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