Method for manufacturing magnetoresistive device

Method for manufacturing magnetoresistive device

The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferrom...

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Hauptverfasser: Takeshi Saruya, Yoshinori Nagamine
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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creator Takeshi Saruya
Yoshinori Nagamine
description The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferromagnetic layer; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of: forming a metal layer on the first ferromagnetic layer; oxidizing the metal layer; and, before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_GB2548644B</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>GB2548644B</sourcerecordid><originalsourceid>FETCH-epo_espacenet_GB2548644B3</originalsourceid><addsrcrecordid>eNrjZDDwTS3JyE9RSMsvUshNzCtNS0wuKS3KzEsH8tLzUkvyi1KLM4tLMstSFVJSyzKTU3kYWNMSc4pTeaE0N4O8m2uIs4duakF-fGpxQWJyKlBbvLuTkamJhZmJiZMxYRUA-eYrHA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for manufacturing magnetoresistive device</title><source>esp@cenet</source><creator>Takeshi Saruya ; Yoshinori Nagamine</creator><creatorcontrib>Takeshi Saruya ; Yoshinori Nagamine</creatorcontrib><description>The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferromagnetic layer; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of: forming a metal layer on the first ferromagnetic layer; oxidizing the metal layer; and, before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200902&amp;DB=EPODOC&amp;CC=GB&amp;NR=2548644B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200902&amp;DB=EPODOC&amp;CC=GB&amp;NR=2548644B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Takeshi Saruya</creatorcontrib><creatorcontrib>Yoshinori Nagamine</creatorcontrib><title>Method for manufacturing magnetoresistive device</title><description>The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferromagnetic layer; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of: forming a metal layer on the first ferromagnetic layer; oxidizing the metal layer; and, before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwTS3JyE9RSMsvUshNzCtNS0wuKS3KzEsH8tLzUkvyi1KLM4tLMstSFVJSyzKTU3kYWNMSc4pTeaE0N4O8m2uIs4duakF-fGpxQWJyKlBbvLuTkamJhZmJiZMxYRUA-eYrHA</recordid><startdate>20200902</startdate><enddate>20200902</enddate><creator>Takeshi Saruya</creator><creator>Yoshinori Nagamine</creator><scope>EVB</scope></search><sort><creationdate>20200902</creationdate><title>Method for manufacturing magnetoresistive device</title><author>Takeshi Saruya ; Yoshinori Nagamine</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_GB2548644B3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Takeshi Saruya</creatorcontrib><creatorcontrib>Yoshinori Nagamine</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Takeshi Saruya</au><au>Yoshinori Nagamine</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for manufacturing magnetoresistive device</title><date>2020-09-02</date><risdate>2020</risdate><abstract>The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferromagnetic layer; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of: forming a metal layer on the first ferromagnetic layer; oxidizing the metal layer; and, before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature.</abstract><oa>free_for_read</oa></addata></record>
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subjects ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
title Method for manufacturing magnetoresistive device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T11%3A20%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Takeshi%20Saruya&rft.date=2020-09-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EGB2548644B%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true