Transitioned film growth for conductive semiconductor materials

A center region of conductive material/s may be disposed or "sandwiched" between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in tur...

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Bibliographische Detailangaben

Hauptverfasser:	MICHAEL F TAYLOR, ATHANASIOS J SYLLAIOS, SAMEER K AJMERA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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