Bipolar transistor comprising a raised collector pedestal for reduced capacitance

A heterojunction bipolar transistor 100 and a method of forming the heterojunction bipolar transistor with a raised collector pedestal 125 in reduced dimension for reduced base-collector junction capacitance. The raised collector pedestal 125 is on the top surface of a substrate 121, 120, 101 and ex...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DAVID L HARAME, JOHN JOSEPH ELLIS-MONAGHAN, JOHN JOSEPH PEKARIK, QIZHI LIU, JAMES WILLIAM ADKISSON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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