Semiconductor device and method of manufacture

Passively modelocked semiconductor laser device 19 comprises active region 4 and cladding layer 5, 7. A saturable absorbing layer 6 within the cladding layer, for example a thick quantum well layer (TQW), has at least a portion 11a which absorbs light emitted by the active region, and at least a por...

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Bibliographische Detailangaben

Hauptverfasser:	JONATHAN HEFFERNAN, BRENDAN POOLE, STEWART EDWARD HOOPER, RAKESH ROSHAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
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