Method of forming a buried plate of a trench capacitor

A trench 104 is etched in a silicon wafer 100 and an arsenic doped glass layer 106 is formed in the trench. A second layer 108 of undoped glass is then deposited on the layer 106. After filling the trench with photoresist and partially removing the photoresist, the unprotected portions of the layers...

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Bibliographische Detailangaben

Hauptverfasser:	PAUL WENSLEY, GUENTHER KOFFLER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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