Short channel IGBT with improved forward voltage drop and improved switching power loss

Short channel IGBT with improved forward voltage drop and improved switching power loss

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1. Verfasser: HERBERT J GOULD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Short channel IGBT with improved forward voltage drop and improved switching power loss
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