Anisotropic etching of metal films in the fabrication of interconnects

A method for anisotropically etching metal interconnects in the fabrication of semiconductor devices, especially ULSI interconnects having high aspect ratios comprises depositing a metal film 3 on an oxide layer 14 of a semiconductor substrate 1 by techniques well-known in the art. A mask layer 4 is...

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Bibliographische Detailangaben

Hauptverfasser:	DONALD S GARDNER, XIAOUN MU, DAVID B FRASER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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