SUBMERGED STORAGE PLATE MEMORY CELL

PURPOSE: To provide a transistor storage cell which is highly immune to noises, without needing an epitaxial layer by facing the surface of a polycrystalline Si core formed in a trench, perpendicular to a substrate surface in a p-type region formed round the trench through a dielectric layer. CONSTI...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	DAEJE CHIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
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