SILYLATION METHOD ONTO SURFACE OF POLYMER MEMBRANE AND PATTERN FORMATION PROCESS BY THE UTILIZATION OF SILYLATION METHOD
A silylation method wherein a resist coating applied on a substrate is reacted with an organic silane compound under the irradiation of a deep ultraviolet ray to render regions of the resist coating durable to oxidative ion etching, whereby a fine pattern is formed. The resist coating includes a lay...
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| creator | MINEO UEKI YOSHIAKI MIMURA ISAMU KOTAKA |
| description | A silylation method wherein a resist coating applied on a substrate is reacted with an organic silane compound under the irradiation of a deep ultraviolet ray to render regions of the resist coating durable to oxidative ion etching, whereby a fine pattern is formed. The resist coating includes a layer of an active polymer which is reactive with an organic silane compound under the irradiation of a deep ultraviolet ray to be combined with silyl groups, and a layer of an inert polymer which is not reactive with an organic silicone compound under the irradiation of a deep ultraviolet ray. A desired pattern is formed with the resist coating by ordinary lithographic technique, and then the active polymer layer of the pattern is allowed to contact with an organic silane compound while being irradiated with a deep ultraviolet ray to introduce silyl groups into the active polymer layer of the pattern so as to form masking regions durable to oxidative ion etching. The substrate is then subjected to oxidative ion etching to form a fine pattern thereon. |
| format | Patent |
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The resist coating includes a layer of an active polymer which is reactive with an organic silane compound under the irradiation of a deep ultraviolet ray to be combined with silyl groups, and a layer of an inert polymer which is not reactive with an organic silicone compound under the irradiation of a deep ultraviolet ray. A desired pattern is formed with the resist coating by ordinary lithographic technique, and then the active polymer layer of the pattern is allowed to contact with an organic silane compound while being irradiated with a deep ultraviolet ray to introduce silyl groups into the active polymer layer of the pattern so as to form masking regions durable to oxidative ion etching. The substrate is then subjected to oxidative ion etching to form a fine pattern thereon.</description><language>eng</language><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G ; APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; ELECTROGRAPHY ; GENERAL PROCESSES OF COMPOUNDING ; HOLOGRAPHY ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; WORKING-UP</subject><creationdate>1989</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890719&DB=EPODOC&CC=GB&NR=2182336B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890719&DB=EPODOC&CC=GB&NR=2182336B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MINEO UEKI</creatorcontrib><creatorcontrib>YOSHIAKI MIMURA</creatorcontrib><creatorcontrib>ISAMU KOTAKA</creatorcontrib><title>SILYLATION METHOD ONTO SURFACE OF POLYMER MEMBRANE AND PATTERN FORMATION PROCESS BY THE UTILIZATION OF SILYLATION METHOD</title><description>A silylation method wherein a resist coating applied on a substrate is reacted with an organic silane compound under the irradiation of a deep ultraviolet ray to render regions of the resist coating durable to oxidative ion etching, whereby a fine pattern is formed. 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The resist coating includes a layer of an active polymer which is reactive with an organic silane compound under the irradiation of a deep ultraviolet ray to be combined with silyl groups, and a layer of an inert polymer which is not reactive with an organic silicone compound under the irradiation of a deep ultraviolet ray. A desired pattern is formed with the resist coating by ordinary lithographic technique, and then the active polymer layer of the pattern is allowed to contact with an organic silane compound while being irradiated with a deep ultraviolet ray to introduce silyl groups into the active polymer layer of the pattern so as to form masking regions durable to oxidative ion etching. The substrate is then subjected to oxidative ion etching to form a fine pattern thereon.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY GENERAL PROCESSES OF COMPOUNDING HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP WORKING-UP |
| title | SILYLATION METHOD ONTO SURFACE OF POLYMER MEMBRANE AND PATTERN FORMATION PROCESS BY THE UTILIZATION OF SILYLATION METHOD |
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