Photodiode

Photodiode La présente description concerne une photodiode (100) comprenant deux murs semiconducteurs latéraux (110b, 110d) et au moins un mur conducteur central (M1, M2, M3, Mi, Mn), chaque mur semiconducteur central étant situé entre deux murs de longueur supérieure. Figure pour l'abrégé : Fig. 1 A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.