PROCEDE DE FABRICATION D'UN DISPOSITIF A TRANSISTORS MOS

A device includes both low-voltage (LV) and high-voltage (HV) metal oxide semiconductor (MOS) transistors of opposite types. Gate stacks for the transistors are formed over a semiconductor layer. First spacers made of a first insulator are provided on the gate stacks of the LV and HV MOS transistors...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WEBER OLIVIER, BIDAL GREGORY, CHHUN SONARITH, MAZURIER JEROME, JOSSE EMMANUEL, ANDRIEU FRANCOIS, GOLANSKI DOMINIQUE
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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