Method for measuring resistance of metal connection between two parts of integrated circuit assembled to form three-dimensional integrated structure, involves forming two cavities on non-assembled face of part of integrated circuit

The method involves forming two cavities (CV1) on a non-assembled face of a part of an integrated circuit, where two cavities lead to two portions of two metal lines (LM1), respectively, or belonging to the metal lines. Resistance of a metal connection is measured by a measuring equipment that is in...

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Bibliographische Detailangaben

Hauptverfasser:	TAIBI RACHID, DI CIOCCIO LEA, CHAPELON LAURENT-LUC
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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