AMELIORATION DE L'APPORT EN ELEMENT ALCALIN DANS LA REACTION DE FORMATION DE L'ALLIAGE I-III-VI2

The method involves depositing a precursor I-III comprising gallium, by electrolysis, on a barrier layer that arrests diffusion of an alkaline element. The alkaline element is deposited on the precursor I-III, where the alkaline element deposit contains sodium and sodium selenide or sodium fluoride....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ROGEE ALEXANDRE, PARISSI LUDOVIC, BROUSSILLOU CEDRIC
Format:	Patent
Sprache:	fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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