PROCEDE DE CROISSANCE D'UN SOLIDE CRISTALLIN, SOLIDE CRISTALLIN ET DISPOSITIF ASSOCIES

The present invention relates to a process for the growth of a crystalline solid by inching then cooling a crystallization material (2), in which the crystallization material (2) spread over a support is melted in the operating region (4) of a heat source. According to this process: outside of the o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ARZAKANTSYAN MIKAYEL, GEVORGYAN VLADIMIR, ANANYAN NARINE, CHANTELOUP JEANRISTOPHE
Format: Patent
Sprache:fre
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ARZAKANTSYAN MIKAYEL
GEVORGYAN VLADIMIR
ANANYAN NARINE
CHANTELOUP JEANRISTOPHE
description The present invention relates to a process for the growth of a crystalline solid by inching then cooling a crystallization material (2), in which the crystallization material (2) spread over a support is melted in the operating region (4) of a heat source. According to this process: outside of the operating region, the crystallization material (2) is spread over at least two areas of different compositions (31, 32, 33, 34, 33), and the crystallization material (2) being spread over a length greater than the length of the operating region (4), a movement of the operating region (4) relative to the crystallization material (2) is carried out so as to place successively in the operating region (4) then outside of the operating region, portions of the crystallization material of different compositions. This process is used to manufacture laser crystals having a controlled spatial distribution of doping.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_FR2975707B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>FR2975707B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_FR2975707B13</originalsourceid><addsrcrecordid>eNrjZAgLCPJ3dnVxVQAi5yB_z-BgRz9nIE891E8h2N_HEyzsGRzi6OPj6aeDKaTgGqLg4hkc4B_sGeLppuAYHOzv7OkazMPAmpaYU5zKC6W5GRTcXEOcPXRTC_LjU4sLEpNT81JL4t2CjCzNTc0NzJ0MjYlQAgAVrDBB</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROCEDE DE CROISSANCE D'UN SOLIDE CRISTALLIN, SOLIDE CRISTALLIN ET DISPOSITIF ASSOCIES</title><source>esp@cenet</source><creator>ARZAKANTSYAN MIKAYEL ; GEVORGYAN VLADIMIR ; ANANYAN NARINE ; CHANTELOUP JEANRISTOPHE</creator><creatorcontrib>ARZAKANTSYAN MIKAYEL ; GEVORGYAN VLADIMIR ; ANANYAN NARINE ; CHANTELOUP JEANRISTOPHE</creatorcontrib><description>The present invention relates to a process for the growth of a crystalline solid by inching then cooling a crystallization material (2), in which the crystallization material (2) spread over a support is melted in the operating region (4) of a heat source. According to this process: outside of the operating region, the crystallization material (2) is spread over at least two areas of different compositions (31, 32, 33, 34, 33), and the crystallization material (2) being spread over a length greater than the length of the operating region (4), a movement of the operating region (4) relative to the crystallization material (2) is carried out so as to place successively in the operating region (4) then outside of the operating region, portions of the crystallization material of different compositions. This process is used to manufacture laser crystals having a controlled spatial distribution of doping.</description><language>fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140711&amp;DB=EPODOC&amp;CC=FR&amp;NR=2975707B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140711&amp;DB=EPODOC&amp;CC=FR&amp;NR=2975707B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ARZAKANTSYAN MIKAYEL</creatorcontrib><creatorcontrib>GEVORGYAN VLADIMIR</creatorcontrib><creatorcontrib>ANANYAN NARINE</creatorcontrib><creatorcontrib>CHANTELOUP JEANRISTOPHE</creatorcontrib><title>PROCEDE DE CROISSANCE D'UN SOLIDE CRISTALLIN, SOLIDE CRISTALLIN ET DISPOSITIF ASSOCIES</title><description>The present invention relates to a process for the growth of a crystalline solid by inching then cooling a crystallization material (2), in which the crystallization material (2) spread over a support is melted in the operating region (4) of a heat source. According to this process: outside of the operating region, the crystallization material (2) is spread over at least two areas of different compositions (31, 32, 33, 34, 33), and the crystallization material (2) being spread over a length greater than the length of the operating region (4), a movement of the operating region (4) relative to the crystallization material (2) is carried out so as to place successively in the operating region (4) then outside of the operating region, portions of the crystallization material of different compositions. This process is used to manufacture laser crystals having a controlled spatial distribution of doping.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgLCPJ3dnVxVQAi5yB_z-BgRz9nIE891E8h2N_HEyzsGRzi6OPj6aeDKaTgGqLg4hkc4B_sGeLppuAYHOzv7OkazMPAmpaYU5zKC6W5GRTcXEOcPXRTC_LjU4sLEpNT81JL4t2CjCzNTc0NzJ0MjYlQAgAVrDBB</recordid><startdate>20140711</startdate><enddate>20140711</enddate><creator>ARZAKANTSYAN MIKAYEL</creator><creator>GEVORGYAN VLADIMIR</creator><creator>ANANYAN NARINE</creator><creator>CHANTELOUP JEANRISTOPHE</creator><scope>EVB</scope></search><sort><creationdate>20140711</creationdate><title>PROCEDE DE CROISSANCE D'UN SOLIDE CRISTALLIN, SOLIDE CRISTALLIN ET DISPOSITIF ASSOCIES</title><author>ARZAKANTSYAN MIKAYEL ; GEVORGYAN VLADIMIR ; ANANYAN NARINE ; CHANTELOUP JEANRISTOPHE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_FR2975707B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>fre</language><creationdate>2014</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>ARZAKANTSYAN MIKAYEL</creatorcontrib><creatorcontrib>GEVORGYAN VLADIMIR</creatorcontrib><creatorcontrib>ANANYAN NARINE</creatorcontrib><creatorcontrib>CHANTELOUP JEANRISTOPHE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARZAKANTSYAN MIKAYEL</au><au>GEVORGYAN VLADIMIR</au><au>ANANYAN NARINE</au><au>CHANTELOUP JEANRISTOPHE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCEDE DE CROISSANCE D'UN SOLIDE CRISTALLIN, SOLIDE CRISTALLIN ET DISPOSITIF ASSOCIES</title><date>2014-07-11</date><risdate>2014</risdate><abstract>The present invention relates to a process for the growth of a crystalline solid by inching then cooling a crystallization material (2), in which the crystallization material (2) spread over a support is melted in the operating region (4) of a heat source. According to this process: outside of the operating region, the crystallization material (2) is spread over at least two areas of different compositions (31, 32, 33, 34, 33), and the crystallization material (2) being spread over a length greater than the length of the operating region (4), a movement of the operating region (4) relative to the crystallization material (2) is carried out so as to place successively in the operating region (4) then outside of the operating region, portions of the crystallization material of different compositions. This process is used to manufacture laser crystals having a controlled spatial distribution of doping.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language fre
recordid cdi_epo_espacenet_FR2975707B1
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title PROCEDE DE CROISSANCE D'UN SOLIDE CRISTALLIN, SOLIDE CRISTALLIN ET DISPOSITIF ASSOCIES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T04%3A59%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ARZAKANTSYAN%20MIKAYEL&rft.date=2014-07-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EFR2975707B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true